| Summary: | 碩士 === 國立中山大學 === 物理學系研究所 === 104 === In this research, we used a Ti:sapphire pulse laser and TCSPC(Time-Correlated Single Photon Counting) system to study optical properties and TRPL (time-resolved photoluminescence) of the two-dimension gallium selenide (2D GaSe). The sample we have studied was made by vertical bridgman method.
In temperature dependent PL experiment, there are two peaks which were provided by the free exciton and bound exciton. By using Varshni relation, we can explain that why the peaks exhibit the shift with temperature increasing. Also, Arrhenius plot is for calculating the activation energy.
In order to observe the relationship of Power dependent PL via changing excitation power and temperature , the power law have been used to show the result.
TRPL experiment showed the lifetime of the carrier recombination depends on temperature, excitation power and wavelength. We also calculate the IQE(Internal quantum efficiency) to explain lifetime, luminescence lifetime and non-luminescence lifetime. In addition non-luminescence lifetime will become shorter with temperature increasing.
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