| Summary: | 碩士 === 國立清華大學 === 材料科學工程學系 === 104 === Among the materials for preparing transparent conductive films (TCFs), metal nanowire is gaining a great deal of interest owing to advantages of low sheet resistance (Rsh), high transparency and high flexibility, and copper nanowires (CuNWs) is one of the metal nanowires been investigated. However, CuNWs face the serious problem of oxidation, which results in the deterioration on electrical conductivity. In this work, we developed a highly stable electrical approach based on reduced graphene oxide (rGO)/ CuNW for TCFs. The presence of the rGO playing a role a gas barrier layer can effectively overcome the problem of CuNW oxidation. The electrical stability of the rGO/CuNW films prepared by varied syntheses were investigated systematically. The CuNWs with an average diameter of 58 ± 9 nm and a length longer than 10 μm were synthesized through a solution-based method. The best optoelectrical property of the CuNW film is 89.2% @ 550 nm and 22.0 ± 0.6 Ω/sq. After exposure to ambient atmosphere for 15 days, the Rsh of CuNW film substantially raised to 256.7 ± 2.1 Ω/sq., and became an insulator after 26 days. To solve the oxidation problem, two rGO fabrication processes were developed, one was chemically reduced graphene oxide (c-rGO), and the other was treating the graphene oxide by thermal reduction under hydrogen to form h-rGO. Similar trend of variety in Rsh between c-rGO/CuNW film and CuNW film was detected. On the contrast, after exposure to ambient atmosphere for 30 days, the Rsh of h-rGO/CuNW film was slightly increased from 25.1 ± 0.1 /sq. to 42.2 ± 0.1 /sq. accompanied a transmittance of 85.9% @ 550 nm. Such high electrical stability is due to the complete coverage of h-rGO on CuNW caused by the hydrophilicity of GO in nature. The high flexibilityof h-rGO/CuNW film was also demonstrated. Based upon the obtained results, the synthesized h-rGO/CuNW film possesses high electrical stability and flexibility, which is a potential material in TCFs.
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