Design of W-band and V-band Low Noise Amplifiers with Transformer Techniques
碩士 === 國立清華大學 === 電機工程學系 === 104 === Due to the scaling of silicon technology, millimeter-wave (mm-wave) integrated circuits especially in W-band (75-110 GHz) and V-band (40-75 GHz) are widely explored in recent years. For example, a CMOS imaging receiver array for fog vision camera and security, an...
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ndltd-TW-104NTHU54420442017-07-30T04:40:51Z http://ndltd.ncl.edu.tw/handle/48122490903617678671 Design of W-band and V-band Low Noise Amplifiers with Transformer Techniques W頻段與V頻段變壓器技術之低雜訊放大器設計 Huang, Chung-Ying 黃重穎 碩士 國立清華大學 電機工程學系 104 Due to the scaling of silicon technology, millimeter-wave (mm-wave) integrated circuits especially in W-band (75-110 GHz) and V-band (40-75 GHz) are widely explored in recent years. For example, a CMOS imaging receiver array for fog vision camera and security, and a CMOS transceiver for high-speed video streaming. In wireless communication systems, low noise amplifier (LNA) is the first block in the receiver to amplify the received weak signal with minimum noise added. A good LNA design requires a high gain, low noise figure, high linearity, good input-output matching, and stability. However, the designs of W-band front-end circuits in CMOS technology are challenging due to the transistor parasitic capacitance, the low breakdown voltage, and the quality of the on-chip passive devices. This thesis presents two LNAs in W-band and one LNA in V-band in 90-nm CMOS. The first design is a W-band LNA with a shunt-series transformer feedback at the input to achieve a wideband input matching and low noise performance simultaneously. The first design achieves a 3-dB bandwidth of 6.5 GHz, a peak gain of 16.1 dB at 64 GHz, a minimum noise figure of 10 dB, and an input P1-dB of -18 dBm. The second work is an improved design of the first one. Physical layout is revised to improve the accuracy of the electromagnetic modeling. Inter-stage capacitors are substituted for inter-stage transformers for matching optimization. The second design achieves a wide 3-dB bandwidth of 20 GHz, a peak gain of 7.6 dB at 76 GHz, a minimum noise figure about 7.5 dB at 76 GHz, and an input P1-dB of -12 dBm. Lastly, a V-band LNA is proposed. The Gm-boosting technique is adapted in the first stage with a source-to-gate transformer to improve the voltage gain. The T-coil peaking feedback transformer is designed at the output of the first stage to enhance the inter-stage bandwidth. The shunt-series transformer in the inter-stage serves as the matching network to provide a wideband loading. The V-band design in simulation achieves a 3-dB bandwidth of 10 GHz, a peak gain of 9.6 dB at 59 GHz, a minimum noise figure of 5 dB at 59 GHz, and an input P1-dB of -12 dBm. All of the proposed amplifiers are designed by the minimum noise measure technique to optimize their performances. Ground shielding under the passive devices are used to minimize the substrate loss. Liu, Yi-Chun 劉怡君 2016 學位論文 ; thesis 71 en_US |
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碩士 === 國立清華大學 === 電機工程學系 === 104 === Due to the scaling of silicon technology, millimeter-wave (mm-wave) integrated circuits especially in W-band (75-110 GHz) and V-band (40-75 GHz) are widely explored in recent years. For example, a CMOS imaging receiver array for fog vision camera and security, and a CMOS transceiver for high-speed video streaming. In wireless communication systems, low noise amplifier (LNA) is the first block in the receiver to amplify the received weak signal with minimum noise added. A good LNA design requires a high gain, low noise figure, high linearity, good input-output matching, and stability. However, the designs of W-band front-end circuits in CMOS technology are challenging due to the transistor parasitic capacitance, the low breakdown voltage, and the quality of the on-chip passive devices.
This thesis presents two LNAs in W-band and one LNA in V-band in 90-nm CMOS. The first design is a W-band LNA with a shunt-series transformer feedback at the input to achieve a wideband input matching and low noise performance simultaneously. The first design achieves a 3-dB bandwidth of 6.5 GHz, a peak gain of 16.1 dB at 64 GHz, a minimum noise figure of 10 dB, and an input P1-dB of -18 dBm. The second work is an improved design of the first one. Physical layout is revised to improve the accuracy of the electromagnetic modeling. Inter-stage capacitors are substituted for inter-stage transformers for matching optimization. The second design achieves a wide 3-dB bandwidth of 20 GHz, a peak gain of 7.6 dB at 76 GHz, a minimum noise figure about 7.5 dB at 76 GHz, and an input P1-dB of -12 dBm. Lastly, a V-band LNA is proposed. The Gm-boosting technique is adapted in the first stage with a source-to-gate transformer to improve the voltage gain. The T-coil peaking feedback transformer is designed at the output of the first stage to enhance the inter-stage bandwidth. The shunt-series transformer in the inter-stage serves as the matching network to provide a wideband loading. The V-band design in simulation achieves a 3-dB bandwidth of 10 GHz, a peak gain of 9.6 dB at 59 GHz, a minimum noise figure of 5 dB at 59 GHz, and an input P1-dB of -12 dBm. All of the proposed amplifiers are designed by the minimum noise measure technique to optimize their performances. Ground shielding under the passive devices are used to minimize the substrate loss.
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author2 |
Liu, Yi-Chun |
author_facet |
Liu, Yi-Chun Huang, Chung-Ying 黃重穎 |
author |
Huang, Chung-Ying 黃重穎 |
spellingShingle |
Huang, Chung-Ying 黃重穎 Design of W-band and V-band Low Noise Amplifiers with Transformer Techniques |
author_sort |
Huang, Chung-Ying |
title |
Design of W-band and V-band Low Noise Amplifiers with Transformer Techniques |
title_short |
Design of W-band and V-band Low Noise Amplifiers with Transformer Techniques |
title_full |
Design of W-band and V-band Low Noise Amplifiers with Transformer Techniques |
title_fullStr |
Design of W-band and V-band Low Noise Amplifiers with Transformer Techniques |
title_full_unstemmed |
Design of W-band and V-band Low Noise Amplifiers with Transformer Techniques |
title_sort |
design of w-band and v-band low noise amplifiers with transformer techniques |
publishDate |
2016 |
url |
http://ndltd.ncl.edu.tw/handle/48122490903617678671 |
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