High voltage Cd-free CIGS solar cell and Application on Sensor Devices

碩士 === 國立臺南大學 === 電機工程學系碩博士班 === 104 === In this paper, four-source co-evaporation method produced without cadmium (Cd-free) CIGS solar cells produced in the silicon substrate cadmium-free CIGS solar cells, photovoltaic conversion efficiency reached 10.96%. The growth of the polycrystalline thin fil...

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Main Authors: Chia-Ju Chuang, 莊佳儒
Other Authors: Cheng-Liang Hsu
Format: Others
Language:zh-TW
Published: 2016
Online Access:http://ndltd.ncl.edu.tw/handle/32250977624338843314
id ndltd-TW-104NTNT0442014
record_format oai_dc
spelling ndltd-TW-104NTNT04420142017-09-03T04:25:19Z http://ndltd.ncl.edu.tw/handle/32250977624338843314 High voltage Cd-free CIGS solar cell and Application on Sensor Devices 高電壓無鎘之銅銦鎵硒太陽能電池及感測器元件之應用 Chia-Ju Chuang 莊佳儒 碩士 國立臺南大學 電機工程學系碩博士班 104 In this paper, four-source co-evaporation method produced without cadmium (Cd-free) CIGS solar cells produced in the silicon substrate cadmium-free CIGS solar cells, photovoltaic conversion efficiency reached 10.96%. The growth of the polycrystalline thin film CIGS ~ 1.6μm in thickness, the width of the crystals is about 1.0 μm, respectively, and the atomic ratio of Cu: 21%, In: 17%, Ga: 10% and Se: 52%, the proportion of this element results very close to the US renewable energy laboratory (NREL) published the optimum thickness ratio. With the growth of the ZnS films by chemical bath deposition (CBD) method, by scanning electron microscopy (SEM) observation and UV-visible spectroscopy measurements that this ZnS films have a high uniformity, high transmittance (~ 80% ) and wide bandgap (~ 3.9eV). Zinc oxide RF magnetron sputtering (RF Sputtering) system doped deposition of aluminum (ZnO: Al) film, the thickness of 500nm, the transmittance and resistivity, respectively, 80% and 8 × 10-4 Ω- cm. Followed by three series of CIGS solar cells, showing three series CIGS solar cell lighting (AM 1.5G) silicon substrate current - voltage (I-V) characteristics of the photovoltaic element. Circuit current density (Jsc), open-circuit voltage (Voc), the conversion efficiency of the fill factor (FF) and CIGS solar cells (η) were 32.3 mA / cm2,1.76V, 46% and 25.9%. The second part of the thesis of copper indium gallium selenide (CIGS) thin film, molybdenum film and metal particles are bonded CIGS-based solar cell applications, this experiment will be different in different relative humidity irradiation light band of CIGS thin film and molybdenum oxide film for humidity measurement, in different environments (temperature and humidity) with white light of different frequencies on CIGS thin film made of light Prosecution and measuring the amount of gas measured at a fixed temperature portion of our molybdenum were measured at different concentrations of ammonia and fixed ammonia concentration change measured different operating temperatures. Finally, we deposited part of the metal particles applied on the surface of the window layer of a transparent conductive film AZO complete silicon substrate CIGS solar cell element of metal nano-particles and then compare whether the metal particles of the photovoltaic element characteristics differences, and integrated into the Double limit alcohol gas were measured. Cheng-Liang Hsu 許正良 2016 學位論文 ; thesis 116 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 國立臺南大學 === 電機工程學系碩博士班 === 104 === In this paper, four-source co-evaporation method produced without cadmium (Cd-free) CIGS solar cells produced in the silicon substrate cadmium-free CIGS solar cells, photovoltaic conversion efficiency reached 10.96%. The growth of the polycrystalline thin film CIGS ~ 1.6μm in thickness, the width of the crystals is about 1.0 μm, respectively, and the atomic ratio of Cu: 21%, In: 17%, Ga: 10% and Se: 52%, the proportion of this element results very close to the US renewable energy laboratory (NREL) published the optimum thickness ratio. With the growth of the ZnS films by chemical bath deposition (CBD) method, by scanning electron microscopy (SEM) observation and UV-visible spectroscopy measurements that this ZnS films have a high uniformity, high transmittance (~ 80% ) and wide bandgap (~ 3.9eV). Zinc oxide RF magnetron sputtering (RF Sputtering) system doped deposition of aluminum (ZnO: Al) film, the thickness of 500nm, the transmittance and resistivity, respectively, 80% and 8 × 10-4 Ω- cm. Followed by three series of CIGS solar cells, showing three series CIGS solar cell lighting (AM 1.5G) silicon substrate current - voltage (I-V) characteristics of the photovoltaic element. Circuit current density (Jsc), open-circuit voltage (Voc), the conversion efficiency of the fill factor (FF) and CIGS solar cells (η) were 32.3 mA / cm2,1.76V, 46% and 25.9%. The second part of the thesis of copper indium gallium selenide (CIGS) thin film, molybdenum film and metal particles are bonded CIGS-based solar cell applications, this experiment will be different in different relative humidity irradiation light band of CIGS thin film and molybdenum oxide film for humidity measurement, in different environments (temperature and humidity) with white light of different frequencies on CIGS thin film made of light Prosecution and measuring the amount of gas measured at a fixed temperature portion of our molybdenum were measured at different concentrations of ammonia and fixed ammonia concentration change measured different operating temperatures. Finally, we deposited part of the metal particles applied on the surface of the window layer of a transparent conductive film AZO complete silicon substrate CIGS solar cell element of metal nano-particles and then compare whether the metal particles of the photovoltaic element characteristics differences, and integrated into the Double limit alcohol gas were measured.
author2 Cheng-Liang Hsu
author_facet Cheng-Liang Hsu
Chia-Ju Chuang
莊佳儒
author Chia-Ju Chuang
莊佳儒
spellingShingle Chia-Ju Chuang
莊佳儒
High voltage Cd-free CIGS solar cell and Application on Sensor Devices
author_sort Chia-Ju Chuang
title High voltage Cd-free CIGS solar cell and Application on Sensor Devices
title_short High voltage Cd-free CIGS solar cell and Application on Sensor Devices
title_full High voltage Cd-free CIGS solar cell and Application on Sensor Devices
title_fullStr High voltage Cd-free CIGS solar cell and Application on Sensor Devices
title_full_unstemmed High voltage Cd-free CIGS solar cell and Application on Sensor Devices
title_sort high voltage cd-free cigs solar cell and application on sensor devices
publishDate 2016
url http://ndltd.ncl.edu.tw/handle/32250977624338843314
work_keys_str_mv AT chiajuchuang highvoltagecdfreecigssolarcellandapplicationonsensordevices
AT zhuāngjiārú highvoltagecdfreecigssolarcellandapplicationonsensordevices
AT chiajuchuang gāodiànyāwúlìzhītóngyīnjiāxītàiyángnéngdiànchíjígǎncèqìyuánjiànzhīyīngyòng
AT zhuāngjiārú gāodiànyāwúlìzhītóngyīnjiāxītàiyángnéngdiànchíjígǎncèqìyuánjiànzhīyīngyòng
_version_ 1718525793788755968