Fabrication of Nano Electronics Devices Based on Kalium Doped ZnO Nanowires by Low Temperature Hydrothermal Synthesis Technology.

• Main Authors: Wang, Liang-Kai, 王良凱
• Other Authors: Hsu, Cheng-Liang
• Format: Others
• Language: zh-TW
• Published: 2016
• Online Access: http://ndltd.ncl.edu.tw/handle/2p89r2

碩士 === 國立臺南大學 === 電機工程學系碩博士班 === 104 === In this study, which we are growing different seed layer on a glass substrate (AZO and ZnO), we use the hydrothermal method to successfully prepare ZnO:K NWs , and to measure a variety of crystal structure analysis, Containing SEM, EDS, TEM, SAED, XRD, PL, XPS, Hall and UV-ATR. In the SEM, we can observe the growth of AZO thin film and the ZnO layer of ZnO:K NWs (ZnO:K NWs / AZO and ZnO:K NWs / ZnO) length and diameter, respectively about 0.92μ / about 202nm and about 1.4μm / about 195nm, from EDS analysis can be found when both the doping concentrations were 0.28% and 0.32%, and from XRD analysis that can grow more than two different nanowire thin film layer on the lattice structure, and there are good belong to a hexagonal structure, It can prove ZnO:K NWs/ AZO lattice constant of 2.5Å from TEM, Followed with Hall measurement, field emission, XPS measurement can be direct or indirect evidence that ZnO:K is a P-type material, Hall measurements ZnO:K NWs / AZO and ZnO:K NWs / ZnO were measured to 7.186×10+13 cm3 and 1.345×10+13 cm3 of the carrier concentration. We can also calculate the from the field emission measurements that the work function is 5.7eV, compared to be higher than ZnO NWs’s 5.3eV. Considering gas measurement we measure the amount of gas with different alcohol concentration and different organic gas at same temperature set. Then measure the current response at fixed temperature but under different humidity, and then with the measurement of UV light and humidity changes, also by providing with a different frequency signal generator to UV light, changing the UV light blink rate and the amount of change with humidity measured current response.