| Summary: | 碩士 === 國立臺灣大學 === 物理研究所 === 104 === In this study, we fabricate organic spin valves (OSVs) in sandwiched structure (//NiFe/CoFe/organic/AlOx/CoFe/) with a thin 3,4,9,10-perylene-tetracarboxylic dianhydride (PTCDA) layer as the organic spacer. The presence of the AlOx layer between PTCDA and the top ferromagnetic electrode makes the junction structure asymmetric. The splitting in I-V curve is observed and represents the bistable resistance states of these junctions. We present the resistance switching behavior of these devices by pulse-current measurement, and demonstrate its potential to be a resistance switching random access memory (RRAM) structure. By fitting of I-V curves, the mechanism of charge transport through these OSVs is proposed to be trap-dependent conduction. We also demonstrate its magnetic properties by magnetoresistance (MR) and magneto-optical Kerr effect (MOKE) measurements. These asymmetric OCVs, combining magnetic and resistance switching properties, could be candidates of multifunctional memory devices.
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