High Mobility and Enhanced Reliability Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors
碩士 === 國立臺灣大學 === 電子工程學研究所 === 104 === The electrical characterization and reliability of top-gate a-IGZO thin-film transistors (TFTs) with various channel length (12 m - 4 m) but fixed channel width and inter layer dielectric (ILD) length are discussed. As channel length decreases, the electric...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/25895714862621118961 |