| Summary: | 碩士 === 國立虎尾科技大學 === 材料科學與工程系材料科學與綠色能源工程碩士班 === 104 === This experiment used non-vacuum processes to prepare KI doped Cu(InGa)Se2 thin films as the absorber layers for the photovoltaic devices. Experiment process is the first, Cu, In, Ga and Se elements and KI adjusted the ratio of different powders, we can obtain a Cu-poor, Stoichiometric and a Cu-rich type.Inks of the mixtures were made using wet-type ball milling,and printed onto a glass substrate to form a precursor film by spin coating. Then, the samples were treated with in a furnace at 300 to 500 oC, respectively, for 10 minutes, then made to reach with heat treatment to then made to reach with heat treatment to from the chalcopyrite structure.The crystal structure changes were observed by X-ray diffraction (XRD),Changer in surface topography were observed by scanning electron microscopy (SEM),Compositions of the films were determined by inductively coupled plasma composition mass spectrometer (ICP-MS) and energy dispersive spectroscopy (EDS),and the band gaps were obtained by photoluminescence (PL) measurement. The experimental result shows that CIGS thin film by annealing had a characteristic peak of a chalcopyrite structure, with increasing annealing temperature, the copper content increased, the half height width of the XRD spectra became narrower and the grains becomes larger.Based on the analysis, we can obtain the best chalycopyrite structured of CIGS thin film at 400 oC 10 minutes.
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