| Summary: | 碩士 === 國立虎尾科技大學 === 電子工程系碩士班 === 104 === This thesis investigates the microwave dielectric properties of (1-x)TiO2-xCaTiO3 material. There are two main subjects. First is the microwave dielectric properties of the bulk material with at different doping concentrations amount. Second is the microwave dielectric properties of thin films grown in different proportions of oxygen.
The (1-x)TiO2-xCaTiO3(x=0~0.1) bulk samples are prepared by solid state reaction method for microwave dielectric properties measurement. Samples with different doping ratio and fixed calcined temperature at 1200℃ are sintered at 1300℃ and 1400℃. The microwave measurement dielectric properties of the bulk samples were measured by the post resonance method useing a network analyzer. X-ray diffration result shows the diffraction peak intensity gradually increased by increasing the amount of CaTiO3 of doping percentage. If the sintered temperature increased from 1300℃ to 1400℃, the diffraction peak intensity has not changed much. By increasing the doping of CaTiO3, sample relative density gradually increased, and the highest relative density happens at x=0.1 at sintering 1400℃ temperature.
The (1-x)TiO2-xCaTiO3 thin films were deposited by the RF reactive magnetron sputtering method. The depostition processwascarried out under fixed sputtering power, sputtering pressure, deposition time, and doping amount and the substrate was heated to 300℃. The microwave dielectric properties of thin films deposited at different compositions of oxygen gas were explored by the extended cavity perturbation technique. From the measurement results, the highest dielectric constant was observed on the films obtained under 50% O2 partial pressure.
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