Investigation of Nitride-based Near Ultraviolet Light-emitting Diodes with Different Al Mole Fraction of P-type AlGaN/InGaN Short-period Superlattice Electron Blocking Layer

Investigation of Nitride-based Near Ultraviolet Light-emitting Diodes with Different Al Mole Fraction of P-type AlGaN/InGaN Short-period Superlattice Electron Blocking Layer

碩士 === 南臺科技大學 === 電子工程系 === 104

Bibliographic Details
Main Authors: LIN.PENG-KUAN, 林芃寬
Other Authors: CHIOU,YU-ZUNG
Format: Others
Language:zh-TW
Published: 2016
Online Access:http://ndltd.ncl.edu.tw/handle/36636462325811337566
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spelling ndltd-TW-104STUT04280212017-09-24T04:41:00Z http://ndltd.ncl.edu.tw/handle/36636462325811337566 Investigation of Nitride-based Near Ultraviolet Light-emitting Diodes with Different Al Mole Fraction of P-type AlGaN/InGaN Short-period Superlattice Electron Blocking Layer 探討不同鋁含量之P型AlGaN/InGaN超晶格結構電子阻擋層對於氮化物系列近紫光發光二極體光輸出功率之影響 LIN.PENG-KUAN 林芃寬 碩士 南臺科技大學 電子工程系 104 CHIOU,YU-ZUNG WANG,CHUN-KAI 邱裕中 王俊凱 2016 學位論文 ; thesis 104 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 南臺科技大學 === 電子工程系 === 104
author2 CHIOU,YU-ZUNG
author_facet CHIOU,YU-ZUNG
LIN.PENG-KUAN
林芃寬
author LIN.PENG-KUAN
林芃寬
spellingShingle LIN.PENG-KUAN
林芃寬
Investigation of Nitride-based Near Ultraviolet Light-emitting Diodes with Different Al Mole Fraction of P-type AlGaN/InGaN Short-period Superlattice Electron Blocking Layer
author_sort LIN.PENG-KUAN
title Investigation of Nitride-based Near Ultraviolet Light-emitting Diodes with Different Al Mole Fraction of P-type AlGaN/InGaN Short-period Superlattice Electron Blocking Layer
title_short Investigation of Nitride-based Near Ultraviolet Light-emitting Diodes with Different Al Mole Fraction of P-type AlGaN/InGaN Short-period Superlattice Electron Blocking Layer
title_full Investigation of Nitride-based Near Ultraviolet Light-emitting Diodes with Different Al Mole Fraction of P-type AlGaN/InGaN Short-period Superlattice Electron Blocking Layer
title_fullStr Investigation of Nitride-based Near Ultraviolet Light-emitting Diodes with Different Al Mole Fraction of P-type AlGaN/InGaN Short-period Superlattice Electron Blocking Layer
title_full_unstemmed Investigation of Nitride-based Near Ultraviolet Light-emitting Diodes with Different Al Mole Fraction of P-type AlGaN/InGaN Short-period Superlattice Electron Blocking Layer
title_sort investigation of nitride-based near ultraviolet light-emitting diodes with different al mole fraction of p-type algan/ingan short-period superlattice electron blocking layer
publishDate 2016
url http://ndltd.ncl.edu.tw/handle/36636462325811337566
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AT línpéngkuān tàntǎobùtónglǚhánliàngzhīpxíngalganinganchāojīnggéjiégòudiànzizǔdǎngcéngduìyúdànhuàwùxìlièjìnzǐguāngfāguāngèrjítǐguāngshūchūgōnglǜzhīyǐngxiǎng
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