Programming methods for 28 nm node nMOSFETs

• Main Authors: Chia-Yu Tsai, 蔡佳佑
• Other Authors: 王錫九
• Format: Others
• Language: en_US
• Online Access: http://ndltd.ncl.edu.tw/handle/hpa393

碩士 === 國立臺北科技大學 === 機電整合研究所 === 104 === Recently, Semiconductor device process technology has developed the rapidly on flash memory technology. This research uses conventional logic MOSFETs to programming. If it can efficiently program in logic device, no need to build specialist system of memory process. It can cost less and reduces the area. It’s the key point of process integration. In this work, the tested 28 nm sample wafers came from UMC. The hafnium-based gate dielectric with a profile of HfO2/ZrO2/HfO2 was deposited with atomic layer deposition (ALD) technology. To find the programing condition, we study two methods. First one is Channel Hot Carrier Injection (CHCI). Its VT variety is bigger and more efficiency. But it has a problem in disturb. It’s a challenge for memory device to P/E repeatedly. The devices which are beyond L=0.035um are more difficult to program. The second method is posed in our research, let the VT of all device reach VCC without disturb problem, but waste more programming time than CHCI. Finally we modify these two methods in length 0.035um. Find that Drain Avalanche Hot Carrier Injection (DAHCI) can reduce the leakage current and the disturbed problem. In the future, we can study its erase behavior and device reliability. Electric can retain in oxide for a long time after programming or not. Its the main work for the future.