| Summary: | 博士 === 元智大學 === 光電工程學系 === 104 === In this thesis, methods for efficiency boost of Cu2ZnSnSe4 (CZTSe) thin film solar cells and Cu(In,Ga)Se2 (CIGS) thin films solar cells, focusing on both thin film quality improvement of the CZTSe and CIGS absorber layers developed. Two stage process with selenization process have been used to prepare the precursor layers of CZTSe and CIGS thin films. Both evaporation and sputtering methods to prepare the precursor layers of CZTSe thin film, while evaporation method has been used to prepare the precursor layers of CIGS thin film. Different approaches have been investigated to enhance the preferable characteristics of CZTSe and CIGS thin films for photovoltaic devices, including back contact metal layer analysis, precursor stacking layers engineering, precursor layer composition, selenization parameters. The effects of these approaches on the optical and electrical characteristics of the CZTSe and CIGS absorber layers, and the device performance have been studied. The highest efficiencies of CZTSe thin film solar cells prepared by different approaches used in this thesis are as the follows: the CZTSe solar cell with conventional device structure prepared by method of selenization after evaporation shows efficiency of 7.18 %; the CZTSe solar cell with conventional device structure prepared by selenization after sputtering using CuxSe and ZnxSn1-x precursor stacking layers shows efficiency of 6.79 %.
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