| Summary: | 碩士 === 國立中正大學 === 光機電整合工程研究所 === 106 === Graphene is a suitable material in the application of photodetectors for its high carrier mobility and broad wavelength absorption ability. However, its optical transmittance and the carrier recombination speed is extremely high after illumination, resulting in poor photoresponse. In this study, the visible-light photoresponse of graphene is enhanced by growing Antimony sulfide through chemical bath deposition method on graphene.
We use UV-ozone to modify bilayer graphene structure, which be changed from hydrophobic to hydrophilic, sp2 to sp3 structure. Then use Raman spectroscopy and Hall measurement to analyze the degree of defect, sheet resistance, carrier mobility and carrier concentration to bilayer graphene at different UV ozone modification time. Graphene has been found that 10 minute UV-ozone modification can make the Antimony sulfide thin film deposited well without serious defects, then deposition different time on 10 minute UV-ozone modification graphene. In the final experiment, the Antimony sulfide/graphene deposite after 6 hours, which was irradiated with 405 nm laser had the best rise time, best light response and detection rate. It is 27.05 ms、112 A/W、2.01 x 10^12 Jones, respectively, by depositing Antimony sulfide on graphene is proven to increase the photoresponse of graphene.
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