| Summary: | 碩士 === 中原大學 === 物理研究所 === 105 === Perovskite materials used for photovoltaics are mainly CH3NH3PbI3 , which is prepared from PbI2 and CH3NH3I (MAI). In this work, instead of using MAI, we use CH(NH2)2I (FAI) in order to obtain a lower band gap material CH(NH2)2PbI3 (FAPbI3). The influence of chemical compositions on the material stability was investigated. By optimizing the concentrations of perovskite precursor, annealing conditions, pure FAPbI3 films can be obtained as indicated by XRD spectra. We also investigate the influence of Cs doping on the stability of perovskite film. We found that a highly stable perovskite films can be obtained by incorporating Cs. According to the scanning electron microscope images, the granular perovskite film is flat and pinhole-free. The champion device shows PCE of 11%, VOC of 0.88 V, and JSC of 18.249 mA/cm2.
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