| Summary: | 碩士 === 中原大學 === 物理研究所 === 105 === Solid-state infrared light-emitting devices play a critical role in all kinds of general, industrial and military uses. Materials with efficient near-infrared emission at room temperature are rare, and the fabrication of most infrared light-emitting devices relies on high-vacuum and high-temperature processes. Here, we report efficient light-emitting diodes based on lead-free halide perovskite CsSnI3 through low-temperature solution processes. We demonstrate infrared light-emitting diodes of electroluminescence is at 950 nm. The CsSnI3 thin films which prepare by toluene dripping method and one-pot solution synthesis method was measured with Scanning Electron Microscope, X-Ray Diffraction, Photoluminescence and Nanosecond time-resolved photoluminescence. The perovskite films prepared by toluene dripping method have higher quality than one-pot solution synthesis method. As a result of the high quality thin films, the devices have high radiance and external quantum efficiency. We demonstrate lead-free perovskite infrared light-emitting diodes with maximum external quantum efficiency of 3.8%, and radiance of 40 W m-2 sr-1 at current density at 364.3 mA/cm2.
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