The fundamental study of leaching process and kinetics with waste CIGS thin film solar cells
碩士 === 大漢技術學院 === 土木工程與環境資源管理研究所 === 105 === In this study, the waste CIGS thin film solar cell glass was used as the raw material for the preparation of acid impregnated, and sulfuric acid was used as the impregnant to impregnate the CIGS thin film solar cell membrane glass with different acid conc...
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ndltd-TW-105DH0000150072019-05-15T23:32:16Z http://ndltd.ncl.edu.tw/handle/pa5546 The fundamental study of leaching process and kinetics with waste CIGS thin film solar cells 銅銦鎵硒(CIGS)薄膜太陽能電池廢棄物酸浸漬之重金屬溶出率及動力學基礎研究 KUO,CHING-HUI 郭清輝 碩士 大漢技術學院 土木工程與環境資源管理研究所 105 In this study, the waste CIGS thin film solar cell glass was used as the raw material for the preparation of acid impregnated, and sulfuric acid was used as the impregnant to impregnate the CIGS thin film solar cell membrane glass with different acid concentration, different speed, different liquid-solid ratio and different temperature for 1 hour , And calculate the dissolution rate of copper, indium and zinc in solar thin film batteries. In this study, the dissolution rate of copper was increased by acid dipping with 2N sulfuric acid at a liquid-solid ratio of 5: 1 (mL / g), a temperature of 30 ° C and an immersion time of 1 hour, and the acid was immersed at 100、200、300 and 400 rotational speeds The range of 14% ~ 17%, indium content of the dissolution rate range of 43% to 49%, zinc dissolution rate of about 100%, so the stirring speed on the metal dissolution rate is not significant, when Using 1N, 2N, 3N, 4N and 5N sulfuric acid, the dissolution rate of copper was in the range of liquid to solid ratio of 5: 1 (mL / g), reaction temperature of 30 ℃, reaction time of 1 hour and stirring speed of 300rpm. About 10% to 30%, the dissolution rate of indium is between about 45% and 75%, and the dissolution rate of zinc is between about 95% and 100%. Using 2N sulfuric acid at different liquid to solid ratio (10 / 1, 7 / 1,5 / 1,3 / 1/1 mL / g) at a temperature of 30 ° C, an immersion time of 1 hour, a rotation speed of 300 rpm, and an immersion time of 15, 30, 45, 60 min , The dissolution rate of copper is between about 10% and 70%, the dissolution rate of indium is between about 20% and 80%, and the dissolution rate of zinc is nearly 100%. With 2N sulfuric acid, ML / g) 5/1, immersion time of 1 hour, at 300 rpm rpm, The dissolution rate of copper was about 10% ~ 50% after acid leaching at different temperatures, and the dissolution rate of indium was about 60% ~ 50%. The dissolution rate of copper was about 10% ~ 50% 100%, zinc dissolution rate of about 85% to 100% between. The acid leaching was carried out at different reaction temperatures (30, 50, 75, 100 ° C) with 2N sulfuric acid at a liquid-solid ratio of 5: 1 (mL / g), stirring time of 1 hour and stirring speed of 300 rpm. The dissolution rate and Arrhenius equation were calculated to be 59.3KJ / mol, indicating that the reaction was not affected by the diffusion diffusion mode and was not easily dissolved by the sulfuric acid impregnant. HU,SHAO-HUA 胡紹華 2017 學位論文 ; thesis 63 zh-TW |
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碩士 === 大漢技術學院 === 土木工程與環境資源管理研究所 === 105 === In this study, the waste CIGS thin film solar cell glass was used as the raw material for the preparation of acid impregnated, and sulfuric acid was used as the impregnant to impregnate the CIGS thin film solar cell membrane glass with different acid concentration, different speed, different liquid-solid ratio and different temperature for 1 hour , And calculate the dissolution rate of copper, indium and zinc in solar thin film batteries.
In this study, the dissolution rate of copper was increased by acid dipping with 2N sulfuric acid at a liquid-solid ratio of 5: 1 (mL / g), a temperature of 30 ° C and an immersion time of 1 hour, and the acid was immersed at 100、200、300 and 400 rotational speeds The range of 14% ~ 17%, indium content of the dissolution rate range of 43% to 49%, zinc dissolution rate of about 100%, so the stirring speed on the metal dissolution rate is not significant, when Using 1N, 2N, 3N, 4N and 5N sulfuric acid, the dissolution rate of copper was in the range of liquid to solid ratio of 5: 1 (mL / g), reaction temperature of 30 ℃, reaction time of 1 hour and stirring speed of 300rpm. About 10% to 30%, the dissolution rate of indium is between about 45% and 75%, and the dissolution rate of zinc is between about 95% and 100%. Using 2N sulfuric acid at different liquid to solid ratio (10 / 1, 7 / 1,5 / 1,3 / 1/1 mL / g) at a temperature of 30 ° C, an immersion time of 1 hour, a rotation speed of 300 rpm, and an immersion time of 15, 30, 45, 60 min , The dissolution rate of copper is between about 10% and 70%, the dissolution rate of indium is between about 20% and 80%, and the dissolution rate of zinc is nearly 100%. With 2N sulfuric acid, ML / g) 5/1, immersion time of 1 hour, at 300 rpm rpm, The dissolution rate of copper was about 10% ~ 50% after acid leaching at different temperatures, and the dissolution rate of indium was about 60% ~ 50%. The dissolution rate of copper was about 10% ~ 50% 100%, zinc dissolution rate of about 85% to 100% between.
The acid leaching was carried out at different reaction temperatures (30, 50, 75, 100 ° C) with 2N sulfuric acid at a liquid-solid ratio of 5: 1 (mL / g), stirring time of 1 hour and stirring speed of 300 rpm. The dissolution rate and Arrhenius equation were calculated to be 59.3KJ / mol, indicating that the reaction was not affected by the diffusion diffusion mode and was not easily dissolved by the sulfuric acid impregnant.
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author2 |
HU,SHAO-HUA |
author_facet |
HU,SHAO-HUA KUO,CHING-HUI 郭清輝 |
author |
KUO,CHING-HUI 郭清輝 |
spellingShingle |
KUO,CHING-HUI 郭清輝 The fundamental study of leaching process and kinetics with waste CIGS thin film solar cells |
author_sort |
KUO,CHING-HUI |
title |
The fundamental study of leaching process and kinetics with waste CIGS thin film solar cells |
title_short |
The fundamental study of leaching process and kinetics with waste CIGS thin film solar cells |
title_full |
The fundamental study of leaching process and kinetics with waste CIGS thin film solar cells |
title_fullStr |
The fundamental study of leaching process and kinetics with waste CIGS thin film solar cells |
title_full_unstemmed |
The fundamental study of leaching process and kinetics with waste CIGS thin film solar cells |
title_sort |
fundamental study of leaching process and kinetics with waste cigs thin film solar cells |
publishDate |
2017 |
url |
http://ndltd.ncl.edu.tw/handle/pa5546 |
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