High Transparent Conductive Film,of low Resistance AZO and Ag Multilayer Preparation by Sputtering

• Main Authors: Hsieh, Chang-Yen, 謝昌諺
• Other Authors: Chen,Pang-Shiu
• Format: Others
• Language: zh-TW
• Published: 2017
• Online Access: http://ndltd.ncl.edu.tw/handle/4kc3ca

碩士 === 明新科技大學 === 化學工程與材料科技系碩士班 === 105 === In this thesis, several stacking layers of aluminum dope zinc oxide(AZO), Ag/AZO, AZO/Ag, AZO/Ag/AZO and AZO/Ag/WO3 were sputtered using sputtering system. With different layers for transparent conductive oxide (TCO) layers exhibit high transmittance in the visible region within the wavelength from 400 to 700 nm with low reistance. The AZO was characterized as a good transparent dielectric material, a low-resistance metal film was inserted into the AZO layer, The AZO/Ag/AZO structure can achieve a sufficient conductivity with an acceptable transparency. The thickness of the inserted Ag layer is 10 nm and the transmittance can reach 94 %. The AZO/Ag/AZO stacking layer showed weakly visible light reflectance and high transmittance at the wavelength of 550 nm. Both of the thickness of the upper and the lower AZO were 30 nm, the sheet resistance of this structure was 4.78 Ω/sq, the figure of merit (FOM) of AZO/Ag/AZO is 1.06×10-1 Ω-1. In the second part of this thesis, WO3 is a high work function and serve as a hole transport layer electrode. In the AZO/Ag/WO3 structure, with the upper and lower dielectric layer of 30 nm, and the average transmittance was 88 %. The FOM of AZO/Ag/WO3 is 7.19×10-2 Ω-1. The refractive index of the buffer was tuned to obtain high transmittance and low resistance. We also used RTA under N2 atmosphere to examine the thermal stability of the multilayer. The surface morphology revealed by atomic force microscopy were indicated the thermal stability of the multi-layers. Our results showed that the optical properties of AZO/Ag/AZO depended on the thickness of Ag film and the annealing temperature. The optimum FOM conditions of the inserted Ag layer was 10 nm in thickness, and the annealing temperature for the AZO/Ag/AZO was 200 °C. The sheet resistance of the AZO/Ag/AZO structure was down to 3.96 Ω/sq, and the FOM at the wavelength of 550 nm of the AZO/Ag/AZO is 1.6×10-1 Ω-1.