Investigation and Fabrication of Organic Polymer Resistive Type Memory and Pressure Sensor

• Main Authors: Shao-AnChien, 簡紹安
• Other Authors: Yan-Kuin Su
• Format: Others
• Language: en_US
• Published: 2017
• Online Access: http://ndltd.ncl.edu.tw/handle/f3938m

碩士 === 國立成功大學 === 微電子工程研究所 === 105 === This thesis is divided into five chapters. In the first chapter, we introduces the types of nonvolatile memory and the simple introduction, including structure, application, switching characteristics and conductive mechanism. In the second chapter, the types, principles and applications of pressure sensors are introduced, and the advantages and disadvantages of each other are compared. In the third chapter, we used human albumin to fabricate resistive memory, and further analysis the characteristics and statistics of the device. In the fourth chapter, we used chicken albumin and PDMS as piezoresistive material to fabricate piezoresistive pressure sensor, and compare the characteristics between the two device. The final chapter is the conclusion and the feasibility of fabricating pressure sensors using flexible substrates in the future. The first part of the experiment, we used water diluted human albumin solution to fabricate the resistive random access memory, we found that it has unipolar resistance switch characteristics, its switching current ratio was 98 times. The switching cycle could be up to 500 times. And the retention time was about 104 seconds. The Set and Reset processes are primarily affected by the conduction mechanism of the ohmic and space charge limited current. The second part of the experiment, we used water diluted chicken albumin solution as piezoresistive material to fabricate piezoresistive pressure sensor. The thickness of albumin changed by pressure and we could measure the different resistance values. The result is a variable resistance, and the resistance change times was up to 1013. And the use of polymer PDMS by adding graphene quantum dots mixed with toluene as a piezoresistive material, the device would have multi-level behavior. The resistance change times was up to 564.