Investigation of Optoelectronic Properties for Nitride-Based Micro Light-Emitting Diodes

• Main Authors: Nai-HsuanCheng, 鄭乃軒
• Other Authors: Wei-Chih Lai
• Format: Others
• Language: zh-TW
• Published: 2017
• Online Access: http://ndltd.ncl.edu.tw/handle/93p3qd

碩士 === 國立成功大學 === 光電科學與工程學系 === 105 === In this study, we demonstrated blue and ultraviolet light emitting diodes (LEDs) with different micro-size mesa area. To sum up the result of optoelectronic properties, micro LEDs optimize the current spreading effect compared with the conventional LEDs. However, since the ratio of sidewall perimeter to mesa area for micro LEDs is larger, there would be a stronger surface recombination effect. We also demonstrated micro LEDs array with common n-type gallium nitride layer, and we deposited electrodes on both sides of common n-type gallium nitride layer. We found that in the part of eletronic properties, the farther the distance from the element to n-type electrode, the higher forward voltage is measured. Furthermore, it has symmetric characteristic through the measurement at different side of the n-type electrodes. In the part of optical properties, the light output power and the wavelength are independent of the distance from the element to n-type electrode. Additionally, the light output power and the wavelength are respectively the same through the measurement at different side of the n-type electrodes. Key words: Micro LEDs; Current Spreading; Surface recombination; Micro LEDs Array