A Study of Low Interfacial Traps High-k Gate Stacks and Palladium Germanide Formation for Germanium Devices
碩士 === 國立交通大學 === 電子研究所 === 105 === In this thesis, we found PdGe alloy junction on n-Ge had obvious electron Schottky barrier height decrement with annealing temperature raising from 300℃ to 400℃. The Schottky barrier height decrement of PdGe alloy junction on n-Ge was significant when the Pd depos...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2016
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/whfpu7 |