| Summary: | 碩士 === 國立交通大學 === 電子物理系所 === 105 === Due to their high energy conversion efficiencies in solar cells, CH3NH3PbI3 perovskites have attracted much attention in optoelectronic applications. Here we deposit high quality thin films of CH3NH3PbI3 perovskites on Si wafers by using a two-step spin coating method, and we try several methods to make field-effect transistors. In this study, we demonstrate the field-effect behavior, the temperature behavior, and the light illumination behavior of the CH3NH3PbI3 perovskite devices. It is found that the resistance decreases with increasing temperatures, indicating the semiconducting behavior almost without impurity doping in our CH3NH3PbI3 perovskites. On the other hand, the resistance under light illumination drops to be two orders of magnitude smaller than that in dark. That implies promising and great potentials as an effective photodetector. After analyzing electron transport behaviors of our CH3NH3PbI3 perovskite devices, we confirm the best fitting and explanation of the data by using the theory of Mott’s three-dimensional variable range hopping by which the disorder parameter T_0 is evaluated. The hopping energy of 97 and 220 meV at 100 and 300 K, respectively, are evaluated for our CH3NH3PbI3 perovskites.
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