| Summary: | 碩士 === 國立交通大學 === 機械工程系所 === 105 === The purpose of this study is to measure the electrical characteristics and parameter extraction of GaN and Power MOSFETs by an instrument. The equivalent circuit of the basic circuit is used to test the electrical characteristics and explain the measurement theory, including the Threshold voltage, I-V curve, C-V curve, gate charge, unclamped inductive switching and so on. To provide circuit design verification mode, and use PSpice circuit simulation software basic power transistor model and circuit structure. The equivalent circuit model of GaN and Power MOSFETs are established by using the parameters fitting method. The equivalent circuit is used to test the electrical characteristics, and the result is compared with measurements of the instrument. The standard operating procedure of the equivalent circuit model is constructed.
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