Development of tetrahedron circumcenter element and its applications to 3-D semiconductor device simulation

• Main Authors: Yun -Quan Hong, 洪筠荃
• Other Authors: Yao-Tsung Tsai
• Format: Others
• Language: zh-TW
• Published: 2017
• Online Access: http://ndltd.ncl.edu.tw/handle/as6uhv

碩士 === 國立中央大學 === 電機工程學系 === 105 === In this thesis, in order to obtain an accurate simulation in the production process, we developed the 3-D tetrahedron circumcenter element to correct the error caused by the edge effect. So as to achieve the accuracy of mesh, we tested and verified the result by using the current density, special resistors and p-n diode. We also compared the estimated value with theoretical value to obtain the correct result from verification. We hope that we can develop the tetrahedral after this experiment. Unfortunately, the exposed right angle tetrahedron of circumcenter caused the error of the volume overlap. The hexahedral structure is a pity. Additionally, we developed a circular and spherical structure to obtain a 3-D mesh with a minimum grid points.