Growth mechanism of a single Copper oxide nanowire
碩士 === 國立東華大學 === 物理學系 === 105 === In this study we grow CuO nanowires at a constant temperature of 400 °C by CVD (chemical vapor deposition),and growth time (30 minutes to 300 minutes) was varied. The diameter of the grown single copper oxide noodle was observed and the relationship between length...
Main Authors: | , |
---|---|
Other Authors: | |
Format: | Others |
Published: |
2017
|
Online Access: | http://ndltd.ncl.edu.tw/handle/248dyz |
Summary: | 碩士 === 國立東華大學 === 物理學系 === 105 === In this study we grow CuO nanowires at a constant temperature of 400 °C by CVD (chemical vapor deposition),and growth time (30 minutes to 300 minutes) was varied. The diameter of the grown single copper oxide noodle was observed and the relationship between length and time.
The results of scanning electron microscopy (SEM) show that the diameter and length of the copper oxide nanowires show a natural distribution (lognormal distribution). We find that the length of copper oxide nanowires increases with the growth time. The diffusion free energy is calculated to be about 22.04 k Cal / mol. It`s conform the short-circuit diffusion mechanism. But the diameter does not increase with the increase of the growth time, and it will be distributed between 25 ~ 50 nm. Showing its non-uniform crystal confinement effect (Anisotropic crystal confinement effect).
|
---|