Design of Ka-Band Driver Amplifier and Low Noise Amplifier Using CMOS 0.18-um Technology
碩士 === 國立高雄海洋科技大學 === 微電子工程研究所 === 105 === In this thesis, a Ka-band driver amplifier and a Ka-band low noise amplifier (LNA) are designed and fabricated in TSMC 0.18-um CMOS technology. The driver amplifier uses three common source (CS) stages to achieve satisfactory gain in the Ka band. The Ka-ban...
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/skd62t |
| Summary: | 碩士 === 國立高雄海洋科技大學 === 微電子工程研究所 === 105 === In this thesis, a Ka-band driver amplifier and a Ka-band low noise amplifier
(LNA) are designed and fabricated in TSMC 0.18-um CMOS technology. The driver
amplifier uses three common source (CS) stages to achieve satisfactory gain in the
Ka band. The Ka-band low noise amplifier is designed based on two-stage cascade
structure for low noise and high gain requirement. Source degeneration inductors
are also used to obtained high gain and low noise simultaneously. The gain of
the amplifiers are designed via selecting the optimum matching points according to
the available power gain circle and the operating power gain circle. The matching
networks are realized by using transmission lines, inductors, and capacitors.The Kaband
driver amplifier was measured with gain of 10.6 dB,
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