Design of Ka-Band Driver Amplifier and Low Noise Amplifier Using CMOS 0.18-um Technology
碩士 === 國立高雄海洋科技大學 === 微電子工程研究所 === 105 === In this thesis, a Ka-band driver amplifier and a Ka-band low noise amplifier (LNA) are designed and fabricated in TSMC 0.18-um CMOS technology. The driver amplifier uses three common source (CS) stages to achieve satisfactory gain in the Ka band. The Ka-ban...
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ndltd-TW-105NKIM04280022019-05-15T23:24:50Z http://ndltd.ncl.edu.tw/handle/skd62t Design of Ka-Band Driver Amplifier and Low Noise Amplifier Using CMOS 0.18-um Technology 使用0.18-um CMOS 製程的Ka 頻帶驅動放大器及低雜訊放大器 LIN, KUN-RONG 林昆榮 碩士 國立高雄海洋科技大學 微電子工程研究所 105 In this thesis, a Ka-band driver amplifier and a Ka-band low noise amplifier (LNA) are designed and fabricated in TSMC 0.18-um CMOS technology. The driver amplifier uses three common source (CS) stages to achieve satisfactory gain in the Ka band. The Ka-band low noise amplifier is designed based on two-stage cascade structure for low noise and high gain requirement. Source degeneration inductors are also used to obtained high gain and low noise simultaneously. The gain of the amplifiers are designed via selecting the optimum matching points according to the available power gain circle and the operating power gain circle. The matching networks are realized by using transmission lines, inductors, and capacitors.The Kaband driver amplifier was measured with gain of 10.6 dB, Chao, Shih-Fong 趙世峰 2017 學位論文 ; thesis 71 zh-TW |
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碩士 === 國立高雄海洋科技大學 === 微電子工程研究所 === 105 === In this thesis, a Ka-band driver amplifier and a Ka-band low noise amplifier
(LNA) are designed and fabricated in TSMC 0.18-um CMOS technology. The driver
amplifier uses three common source (CS) stages to achieve satisfactory gain in the
Ka band. The Ka-band low noise amplifier is designed based on two-stage cascade
structure for low noise and high gain requirement. Source degeneration inductors
are also used to obtained high gain and low noise simultaneously. The gain of
the amplifiers are designed via selecting the optimum matching points according to
the available power gain circle and the operating power gain circle. The matching
networks are realized by using transmission lines, inductors, and capacitors.The Kaband
driver amplifier was measured with gain of 10.6 dB,
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author2 |
Chao, Shih-Fong |
author_facet |
Chao, Shih-Fong LIN, KUN-RONG 林昆榮 |
author |
LIN, KUN-RONG 林昆榮 |
spellingShingle |
LIN, KUN-RONG 林昆榮 Design of Ka-Band Driver Amplifier and Low Noise Amplifier Using CMOS 0.18-um Technology |
author_sort |
LIN, KUN-RONG |
title |
Design of Ka-Band Driver Amplifier and Low Noise Amplifier Using CMOS 0.18-um Technology |
title_short |
Design of Ka-Band Driver Amplifier and Low Noise Amplifier Using CMOS 0.18-um Technology |
title_full |
Design of Ka-Band Driver Amplifier and Low Noise Amplifier Using CMOS 0.18-um Technology |
title_fullStr |
Design of Ka-Band Driver Amplifier and Low Noise Amplifier Using CMOS 0.18-um Technology |
title_full_unstemmed |
Design of Ka-Band Driver Amplifier and Low Noise Amplifier Using CMOS 0.18-um Technology |
title_sort |
design of ka-band driver amplifier and low noise amplifier using cmos 0.18-um technology |
publishDate |
2017 |
url |
http://ndltd.ncl.edu.tw/handle/skd62t |
work_keys_str_mv |
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