Design of Ka-Band Driver Amplifier and Low Noise Amplifier Using CMOS 0.18-um Technology

• Main Authors: LIN, KUN-RONG, 林昆榮
• Other Authors: Chao, Shih-Fong
• Format: Others
• Language: zh-TW
• Published: 2017
• Online Access: http://ndltd.ncl.edu.tw/handle/skd62t

碩士 === 國立高雄海洋科技大學 === 微電子工程研究所 === 105 === In this thesis, a Ka-band driver amplifier and a Ka-band low noise amplifier (LNA) are designed and fabricated in TSMC 0.18-um CMOS technology. The driver amplifier uses three common source (CS) stages to achieve satisfactory gain in the Ka band. The Ka-band low noise amplifier is designed based on two-stage cascade structure for low noise and high gain requirement. Source degeneration inductors are also used to obtained high gain and low noise simultaneously. The gain of the amplifiers are designed via selecting the optimum matching points according to the available power gain circle and the operating power gain circle. The matching networks are realized by using transmission lines, inductors, and capacitors.The Kaband driver amplifier was measured with gain of 10.6 dB,