| Summary: | 碩士 === 國立中山大學 === 物理學系研究所 === 105 === In this thesis we study the physical properties of gallium nitride (GaN) nanorods and InGaN thin films. These samples were grown by plasma assisted molecular beam epitaxy (PAMBE) on c-plane GaN templates. Two types of samples were grown. The first set of samples were n-i-p GaN nanorods (NR) GaN templates fabricated using a predefined template. The second type of samples were epitaxial thin films of InGaN and InN grown on GaN templates.
The surface morphology of these samples was characterized by scanning electron microscopy (SEM) and structure and indium content was verified using two methods. The first method was by high resolution x-ray diffraction (HRXRD) to identify the various crystalline phases, while photoluminescence (PL) and cathodoluminescence (CL) spectroscopies were used to measure the optical band gap.
From our result we find that by optimizing the plasma etching conditions, and improving the Mg doping parameter, n-i-p nanorods can be obtained. In case of the epitaxial thin films, we observe that high indium content can be incorporated by optimizing the growth temperatures.
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