| Summary: | 碩士 === 國立中山大學 === 物理學系研究所 === 105 === In this thesis, we measured photoluminescence(PL) and time-resolved photoluminescence(TRPL) for GaSe1-xSx layer structure with Mai Tai Ti:sapphire laser at different temperature. Direct bound exciton, indirect free and bound exciton dominate the radiative recombination of GaSe1-xSx layer structure. With different sulfur composition, the peak energy of PL shifts to high energy side. It is attributed to the force of the outside electrons attracted to nucleus of sulfur larger than nucleus of selenium. As temperature increasing, non-radiative recombination active energy for different radiative mechanism are 14.26 meV,11.59 meV and 12.7meV for GaSe；9.9 meV, 15.18 meV and 4.31 meV for GaSe0.9S0.1；17.07 meV, 20.62 meV and 7.67 meV for GaSe0.8S0.2；9.56 meV, 6.13 meV and 3.22 meV for GaSe0.5S0.5. Non-radiative recombination dominates the carrier recombination above 100 K for each sample. As a result, photoluminescence intensity decays rapidly.
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