Carrirer recombination of GaSe1-xSx layer structure
碩士 === 國立中山大學 === 物理學系研究所 === 105 === In this thesis, we measured photoluminescence(PL) and time-resolved photoluminescence(TRPL) for GaSe1-xSx layer structure with Mai Tai Ti:sapphire laser at different temperature. Direct bound exciton, indirect free and bound exciton dominate the radiative recomb...
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ndltd-TW-105NSYS51980252019-05-15T23:46:37Z http://ndltd.ncl.edu.tw/handle/h3n933 Carrirer recombination of GaSe1-xSx layer structure 硫硒化鎵層狀結構載子複合 Wen-Ching Chao 趙文靖 碩士 國立中山大學 物理學系研究所 105 In this thesis, we measured photoluminescence(PL) and time-resolved photoluminescence(TRPL) for GaSe1-xSx layer structure with Mai Tai Ti:sapphire laser at different temperature. Direct bound exciton, indirect free and bound exciton dominate the radiative recombination of GaSe1-xSx layer structure. With different sulfur composition, the peak energy of PL shifts to high energy side. It is attributed to the force of the outside electrons attracted to nucleus of sulfur larger than nucleus of selenium. As temperature increasing, non-radiative recombination active energy for different radiative mechanism are 14.26 meV,11.59 meV and 12.7meV for GaSe;9.9 meV, 15.18 meV and 4.31 meV for GaSe0.9S0.1;17.07 meV, 20.62 meV and 7.67 meV for GaSe0.8S0.2;9.56 meV, 6.13 meV and 3.22 meV for GaSe0.5S0.5. Non-radiative recombination dominates the carrier recombination above 100 K for each sample. As a result, photoluminescence intensity decays rapidly. Der-Jun Jang 鄭德俊 2017 學位論文 ; thesis 91 zh-TW |
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碩士 === 國立中山大學 === 物理學系研究所 === 105 === In this thesis, we measured photoluminescence(PL) and time-resolved photoluminescence(TRPL) for GaSe1-xSx layer structure with Mai Tai Ti:sapphire laser at different temperature. Direct bound exciton, indirect free and bound exciton dominate the radiative recombination of GaSe1-xSx layer structure. With different sulfur composition, the peak energy of PL shifts to high energy side. It is attributed to the force of the outside electrons attracted to nucleus of sulfur larger than nucleus of selenium. As temperature increasing, non-radiative recombination active energy for different radiative mechanism are 14.26 meV,11.59 meV and 12.7meV for GaSe;9.9 meV, 15.18 meV and 4.31 meV for GaSe0.9S0.1;17.07 meV, 20.62 meV and 7.67 meV for GaSe0.8S0.2;9.56 meV, 6.13 meV and 3.22 meV for GaSe0.5S0.5. Non-radiative recombination dominates the carrier recombination above 100 K for each sample. As a result, photoluminescence intensity decays rapidly.
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author2 |
Der-Jun Jang |
author_facet |
Der-Jun Jang Wen-Ching Chao 趙文靖 |
author |
Wen-Ching Chao 趙文靖 |
spellingShingle |
Wen-Ching Chao 趙文靖 Carrirer recombination of GaSe1-xSx layer structure |
author_sort |
Wen-Ching Chao |
title |
Carrirer recombination of GaSe1-xSx layer structure |
title_short |
Carrirer recombination of GaSe1-xSx layer structure |
title_full |
Carrirer recombination of GaSe1-xSx layer structure |
title_fullStr |
Carrirer recombination of GaSe1-xSx layer structure |
title_full_unstemmed |
Carrirer recombination of GaSe1-xSx layer structure |
title_sort |
carrirer recombination of gase1-xsx layer structure |
publishDate |
2017 |
url |
http://ndltd.ncl.edu.tw/handle/h3n933 |
work_keys_str_mv |
AT wenchingchao carrirerrecombinationofgase1xsxlayerstructure AT zhàowénjìng carrirerrecombinationofgase1xsxlayerstructure AT wenchingchao liúxīhuàjiācéngzhuàngjiégòuzàizifùhé AT zhàowénjìng liúxīhuàjiācéngzhuàngjiégòuzàizifùhé |
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1719153490139283456 |