In2O3/ZnO Superlattice Epitaxial Thin Films: Growth by Sputtering Deposition and Characterizations of Physical Properties

• Main Authors: Chun-Yuan Teng, 鄧鈞元
• Other Authors: Yung-Sung Chen
• Format: Others
• Language: en_US
• Published: 2017
• Online Access: http://ndltd.ncl.edu.tw/handle/82mwrr

碩士 === 國立中山大學 === 物理學系研究所 === 105 === Superlattices of shallow quantum well structures with alternating layers of In2O3 and ZnO have been prepared by sputtering at 923K on c-sapphire substrates. Optimization of the processing parameters was attempted through varying the sputtering power, deposition temperature, and number of periods. X-ray reflectivity (XRR) assisted with analytical data fittings was used to extract the thickness, density, and roughness of the samples, while X-ray diffraction (XRD), Grazing Incidence X-ray Diffraction (GIXRD), and phi scans were adopted to verify their epitaxy. The epitaxial qualities for the samples with In2O3 as a starting layer are superior to those starting with ZnO based on transmission electron microscopy (TEM) atomic imaging and electron diffraction.