Enhanced Device Reliability for HfZrOx-based Ferroelectric MFM Capacitor by NH3 Plasma Treatment

碩士 === 國立清華大學 === 工程與系統科學系 === 105 === 因申請專利緣故，資料延後公開

Bibliographic Details
Main Authors:	Chen, Pin Hsuan, 陳品璇
Other Authors:	Wu, Yung Hsien
Format:	Others
Language:	en_US
Published:	2017
Online Access:	http://ndltd.ncl.edu.tw/handle/uz87v6

id	ndltd-TW-105NTHU5593014
record_format	oai_dc
spelling	ndltd-TW-105NTHU55930142019-05-15T23:53:45Z http://ndltd.ncl.edu.tw/handle/uz87v6 Enhanced Device Reliability for HfZrOx-based Ferroelectric MFM Capacitor by NH3 Plasma Treatment 以氨氣電漿處理提升氧化鋯鉿鐵電元件之可靠度 Chen, Pin Hsuan 陳品璇碩士國立清華大學工程與系統科學系 105 因申請專利緣故，資料延後公開 Wu, Yung Hsien 巫勇賢 2017 學位論文 ; thesis 76 en_US
collection	NDLTD
language	en_US
format	Others
sources	NDLTD
description	碩士 === 國立清華大學 === 工程與系統科學系 === 105 === 因申請專利緣故，資料延後公開
author2	Wu, Yung Hsien
author_facet	Wu, Yung Hsien Chen, Pin Hsuan 陳品璇
author	Chen, Pin Hsuan 陳品璇
spellingShingle	Chen, Pin Hsuan 陳品璇 Enhanced Device Reliability for HfZrOx-based Ferroelectric MFM Capacitor by NH3 Plasma Treatment
author_sort	Chen, Pin Hsuan
title	Enhanced Device Reliability for HfZrOx-based Ferroelectric MFM Capacitor by NH3 Plasma Treatment
title_short	Enhanced Device Reliability for HfZrOx-based Ferroelectric MFM Capacitor by NH3 Plasma Treatment
title_full	Enhanced Device Reliability for HfZrOx-based Ferroelectric MFM Capacitor by NH3 Plasma Treatment
title_fullStr	Enhanced Device Reliability for HfZrOx-based Ferroelectric MFM Capacitor by NH3 Plasma Treatment
title_full_unstemmed	Enhanced Device Reliability for HfZrOx-based Ferroelectric MFM Capacitor by NH3 Plasma Treatment
title_sort	enhanced device reliability for hfzrox-based ferroelectric mfm capacitor by nh3 plasma treatment
publishDate	2017
url	http://ndltd.ncl.edu.tw/handle/uz87v6
work_keys_str_mv	AT chenpinhsuan enhanceddevicereliabilityforhfzroxbasedferroelectricmfmcapacitorbynh3plasmatreatment AT chénpǐnxuán enhanceddevicereliabilityforhfzroxbasedferroelectricmfmcapacitorbynh3plasmatreatment AT chenpinhsuan yǐānqìdiànjiāngchùlǐtíshēngyǎnghuàgàojiātiědiànyuánjiànzhīkěkàodù AT chénpǐnxuán yǐānqìdiànjiāngchùlǐtíshēngyǎnghuàgàojiātiědiànyuánjiànzhīkěkàodù
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Enhanced Device Reliability for HfZrOx-based Ferroelectric MFM Capacitor by NH3 Plasma Treatment

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