Numerical Simulation Study of Capacitively Coupled RF Plasma Discharges– Effect of Hollow Cathode Structure
碩士 === 國立清華大學 === 工程與系統科學系 === 105 === Capacitively coupled plasma (CCP) sources have been widely used for material processing. The purpose of this study is to investigate the effect of trench on the plasma properties. In this study, CCP discharges have been investigated by fluid model numerical sim...
Main Authors: | Chen, Chia-Yu, 陳佳瑜 |
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Other Authors: | Chen, Gen-Shun |
Format: | Others |
Language: | zh-TW |
Published: |
2017
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Online Access: | http://ndltd.ncl.edu.tw/handle/a96476 |
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