| Summary: | 碩士 === 國立臺灣師範大學 === 光電科技研究所 === 105 === Ferroelectric Hafnium–based oxide has attracted lots of attention due to the negative capacitance effect, and it can be achieved with properly dopants and annealing. Steep SS (Subthreshold Swing) FETs using ferroelectric Hafnium-based oxide has the advantages of process compatibility and devices scale down ability, and it can be the candidates of future IoT era for ultra-low power applications.
In this thesis, the Hafnium–based oxides with various dopants and annealing conditions will be developed. As well as the measurements also be performed, such as DC sweep operation, transient behavior and reliability discussion. The relation between process and material analysis will be discussed, in order to reach high performance electrical characteristics. The promising technology is feasible solution for sub-5nm technology node.
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