Ferroelectric Hafnium–Based Oxides Negative-Capacitance FET:DC, Transient and Reliability
碩士 === 國立臺灣師範大學 === 光電科技研究所 === 105 === Ferroelectric Hafnium–based oxide has attracted lots of attention due to the negative capacitance effect, and it can be achieved with properly dopants and annealing. Steep SS (Subthreshold Swing) FETs using ferroelectric Hafnium-based oxide has the advantages...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/w78tu4 |