Ferroelectric Hafnium–Based Oxides Negative-Capacitance FET:DC, Transient and Reliability
碩士 === 國立臺灣師範大學 === 光電科技研究所 === 105 === Ferroelectric Hafnium–based oxide has attracted lots of attention due to the negative capacitance effect, and it can be achieved with properly dopants and annealing. Steep SS (Subthreshold Swing) FETs using ferroelectric Hafnium-based oxide has the advantages...
Main Authors: | Tang, Chi-Hsuan, 唐啟軒 |
---|---|
Other Authors: | Lee, Ming-Hung |
Format: | Others |
Language: | zh-TW |
Published: |
2017
|
Online Access: | http://ndltd.ncl.edu.tw/handle/w78tu4 |
Similar Items
-
Negative Capacitance InGaAs FinFETs with Ferroelectric Hafnium Zirconium Oxide for Ultra Low Power Applications
by: Chang, Kai-Yun, et al.
Published: (2018) -
Ferroelectric Hafnium–based Oxides for Negative Capacitance and Memory Applications
by: Xie, Meng-Jie, et al.
Published: (2016) -
Sub-60-mV/decade Negative Capacitance FinFET With Sub-10-nm Hafnium-Based Ferroelectric Capacitor
by: Eunah Ko, et al.
Published: (2017-01-01) -
Investigation on Zirconium-Doping Effect of Negative Capacitance Transistors with Ferroelectric Hafnium Zirconium Oxides
by: Chen, Hsin-Yu, et al.
Published: (2019) -
Investigation of Steep-Slope Negative Capacitance Transistors Using Ferroelectric Hafnium Aluminum Oxides
by: Chang, Tun-Jen, et al.
Published: (2018)