Hf1-xZrxO2 Diode and MOSFETs for Memory Applications
碩士 === 國立臺灣師範大學 === 光電科技研究所 === 105 === In recent years, Hafnium-based oxides, have experienced intensive studies and have already been widely application, such as FeRAM, negative-capacitance (NC) FET, and other related fields. With the application of NC-FET, by breaking through the subthreshold swi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/phb7dq |