Manipulation of Spin Current by Controlling the Thickness of AlOx Layer in Pt/AlOx/Py system

• Main Authors: Kuan-Chia Chiu, 邱冠嘉
• Other Authors: Minn-Tsong Lin
• Format: Others
• Language: en_US
• Published: 2017
• Online Access: http://ndltd.ncl.edu.tw/handle/gcak96

碩士 === 國立臺灣大學 === 應用物理研究所 === 105 === The detection of spin current tunneling is being investigated by a technique of ferromagnetic resonance (FMR) with Inverse Spin Hall voltage (VISHE) measurement in Pt/AlOx/Py trilayer system. It is seen that the value of VISHE is apparently decreasing with the increasing thickness of oxide barrier. Furthermore,FMR and VISHE are also measured with the sample rotating out of plane with respect to the magnetic field direction. From the non-linear characteristic behaviour of I-V measurement in tunnelling magnetoresistance (MR) junction(CoFe/NiFe/AlOx/NiFe), it is confirmed that the quality of AlOx forms tunnelling junction. The combined results of FMR, VISHE and nonlinear I-V characteristic suggests that the spin transport mechanism from Py to Pt in Pt/AlOx/Py system is the tunnelling effect through the oxide barrier.