Manipulation of Spin Current by Controlling the Thickness of AlOx Layer in Pt/AlOx/Py system
碩士 === 國立臺灣大學 === 應用物理研究所 === 105 === The detection of spin current tunneling is being investigated by a technique of ferromagnetic resonance (FMR) with Inverse Spin Hall voltage (VISHE) measurement in Pt/AlOx/Py trilayer system. It is seen that the value of VISHE is apparently decreasing with the i...
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ndltd-TW-105NTU052010162019-05-15T23:39:37Z http://ndltd.ncl.edu.tw/handle/gcak96 Manipulation of Spin Current by Controlling the Thickness of AlOx Layer in Pt/AlOx/Py system 利用氧化鋁厚度變化操控鉑/氧化鋁/鎳鐵系統中自旋流大小之研究 Kuan-Chia Chiu 邱冠嘉 碩士 國立臺灣大學 應用物理研究所 105 The detection of spin current tunneling is being investigated by a technique of ferromagnetic resonance (FMR) with Inverse Spin Hall voltage (VISHE) measurement in Pt/AlOx/Py trilayer system. It is seen that the value of VISHE is apparently decreasing with the increasing thickness of oxide barrier. Furthermore,FMR and VISHE are also measured with the sample rotating out of plane with respect to the magnetic field direction. From the non-linear characteristic behaviour of I-V measurement in tunnelling magnetoresistance (MR) junction(CoFe/NiFe/AlOx/NiFe), it is confirmed that the quality of AlOx forms tunnelling junction. The combined results of FMR, VISHE and nonlinear I-V characteristic suggests that the spin transport mechanism from Py to Pt in Pt/AlOx/Py system is the tunnelling effect through the oxide barrier. Minn-Tsong Lin 林敏聰 2017 學位論文 ; thesis 48 en_US |
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碩士 === 國立臺灣大學 === 應用物理研究所 === 105 === The detection of spin current tunneling is being investigated by a technique of ferromagnetic resonance (FMR) with Inverse Spin Hall voltage (VISHE) measurement in Pt/AlOx/Py trilayer system. It is seen that the value of VISHE is apparently decreasing with the increasing thickness of oxide barrier. Furthermore,FMR and VISHE are also measured with the sample rotating out of plane with respect to the magnetic field direction. From the non-linear characteristic behaviour of I-V measurement in tunnelling magnetoresistance (MR) junction(CoFe/NiFe/AlOx/NiFe), it is confirmed that the quality of AlOx forms tunnelling junction. The combined results of FMR, VISHE and nonlinear I-V characteristic suggests that the spin transport mechanism from Py to Pt in Pt/AlOx/Py system is the tunnelling effect through the oxide barrier.
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author2 |
Minn-Tsong Lin |
author_facet |
Minn-Tsong Lin Kuan-Chia Chiu 邱冠嘉 |
author |
Kuan-Chia Chiu 邱冠嘉 |
spellingShingle |
Kuan-Chia Chiu 邱冠嘉 Manipulation of Spin Current by Controlling the Thickness of AlOx Layer in Pt/AlOx/Py system |
author_sort |
Kuan-Chia Chiu |
title |
Manipulation of Spin Current by Controlling the Thickness of AlOx Layer in Pt/AlOx/Py system |
title_short |
Manipulation of Spin Current by Controlling the Thickness of AlOx Layer in Pt/AlOx/Py system |
title_full |
Manipulation of Spin Current by Controlling the Thickness of AlOx Layer in Pt/AlOx/Py system |
title_fullStr |
Manipulation of Spin Current by Controlling the Thickness of AlOx Layer in Pt/AlOx/Py system |
title_full_unstemmed |
Manipulation of Spin Current by Controlling the Thickness of AlOx Layer in Pt/AlOx/Py system |
title_sort |
manipulation of spin current by controlling the thickness of alox layer in pt/alox/py system |
publishDate |
2017 |
url |
http://ndltd.ncl.edu.tw/handle/gcak96 |
work_keys_str_mv |
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