| Summary: | 碩士 === 國立臺灣大學 === 工程科學及海洋工程學研究所 === 105 === The purpose of this research is to investigate the influences of thermal annealing on CIGS absorber layer and CdS Buffer layer interface properties. Since the CdS Buffer/CIGS Absorber is heterojunction structure, there are some defects at CdS Buffer/CIGS Absorber interface. These defects could make the collection of carriers be difficult, and decrease the efficiency of CIGS solar cell. In order to improve the CdS Buffer/CIGS Absorber interface’s defect, we used annealing process on CdS/CIGS/Mo/Glass structure. Then we used instruments to analyze CdS Buffer/CIGS Absorber interface properties.
First, we deposited Mo back contact layer on soda lime glass substrate. Then we deposited CIGS absorber layer by using Sputtering Selenization process; deposited CdS buffer layer by Chemical Bath Deposition. Then annealing process was conducted to anneal CdS/CIGS/Mo/Glass structure. We changed annealing temperatures：150, 200, 250, 300, 350oC and fixed heating rate(1oC/s), holding time(180s). After annealing process, we used SEM to observe the morphology；used XRD to analyze the crystal structure；used XPS to detect the interface diffusion；used PL image and Raman spectroscopy to detect the defect improvement；used Solar Simulator to measure the efficiency of the devices. The results reveals that the annealed CIGS devices had higher efficiency. At annealing temperature 300oC, the CIGS device had most high efficiency. The most high efficiency at this annealing temperature is 9.3%. Compared with no annealing CIGS device, annealed CIGS devices got 4.7% efficiency improvement.
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