DC and AC Characteristics of Two Dimensional Electron Gases in Undoped Silicon/Silicon Germanium Heterostructures
碩士 === 國立臺灣大學 === 電子工程學研究所 === 105 === As the sizes of the CMOS transistors are scaled down to the atomic scale, new channel materials, alternative structures, or novel computing devices to continue the scaling rule become important. Quantum computing by spin manipulation is a promising candidate to...
Main Authors: | Kuan-Yu Chou, 周冠宇 |
---|---|
Other Authors: | 李峻霣 |
Format: | Others |
Language: | zh-TW |
Published: |
2016
|
Online Access: | http://ndltd.ncl.edu.tw/handle/k28w8p |
Similar Items
-
Low-dimensional systems in silicon/silicon-germanium heterostructures
by: Griffin, N.
Published: (1999) -
Induced electron gases in undoped GaAs/AlGaAs heterostructures
by: Harrell, Ruth Helen
Published: (1998) -
Growth, characterization and thermal stability of undoped and in-situ doped silicon-germanium heteroepitaxial layers
by: Jang, Syun-Ming
Published: (2005) -
Investigation of Single Crystalline Germanium and Silicon-Germanium Thin Film on Silicon Substrate
by: Kuan-hsiang Chen, et al.
Published: (2014) -
Electron transport in gated undoped heterostructures
by: Pettersen, Eirik
Published: (1996)