Fabrication and application of multi-layer graphene pn homojunction diode with nitrogen doping
碩士 === 國立臺灣科技大學 === 光電工程研究所 === 105 === Graphene is a two dimensional material with high surface area and high carrier mobility. Graphene is an attractive candidate for potential applications in optical and electrical devices due to these outstanding properties. Pristine graphene usually exhibits p-...
Main Authors: | Wan-Ting Yang, 楊婉婷 |
---|---|
Other Authors: | Kuei-Yi Lee |
Format: | Others |
Language: | en_US |
Published: |
2017
|
Online Access: | http://ndltd.ncl.edu.tw/handle/92664k |
Similar Items
-
Study of fabrication of oxygen doped molybdenum disulfide pn homojunction diode
by: Jun-Xin Ding, et al.
Published: (2017) -
pn-control and pn-homojunction formation of metal-free phthalocyanine by doping
by: Yusuke Shinmura, et al.
Published: (2012-09-01) -
pn-homojunction formation in single fullerene films
by: Masayuki Kubo, et al.
Published: (2011-09-01) -
An Investigation on Ag-ZnO Films and Fabrication on Homojunction Diode
by: You-He Li, et al.
Published: (2017) -
The fabrication of GaAsP/GaP homojunction diodes by LPE
by: Ku-jen Huang, et al.
Published: (1999)