The Frabrication of a Al/SiO2/Si MIS Photo-detector and the Study of its I-V Characteristics
碩士 === 國立高雄大學 === 電機工程學系碩博士班 === 105 === MIS device with its advantages of versatile current-voltage (I-V) control with simple structure and compatibility with Si substrate that make it an ideal device for high speed photodetector devices. In this thesis, we demonstrate the fabrication of a Al/SiO2...
Main Authors: | HSIEH,MENG-HSIEN, 謝孟憲 |
---|---|
Other Authors: | SHIH,MING-CHANG |
Format: | Others |
Language: | zh-TW |
Published: |
2017
|
Online Access: | http://ndltd.ncl.edu.tw/handle/ax4224 |
Similar Items
-
The Fabrication of a Al/SiO2/Si MIS Device and it's Photo-Electric characteristics
by: Cheng-Cheng Wu, et al.
Published: (2015) -
The Fabrication and Responsivity Study of MIS Photo-Detector by ITO/TiO2/SiO2 Structure
by: HUANG,SHEN-WEN, et al.
Published: (2016) -
Frabrication of photopolymer holographic
by: Chi-Tang Hsieh, et al.
Published: (1992) -
SiO2 Grown by Photo-CVD and it's Application of SiC MSM/MIS Photodetectors
by: Chia-Sheng Chang, et al.
Published: (2002) -
The Characteristics of GaN MIS Capacitor Using Photo-CVD SiO2 and Its Application in UV Photodetector
by: Jung-Ran Chiou, et al.
Published: (2002)