Study on the Improvement of Organic Light Emitting Diode by Solution Process

碩士 === 國立虎尾科技大學 === 光電工程系光電與材料科技碩士班 === 105 === This paper has made use of solution process to produce organic light-emitting diodes and measure life-span of its components. The focus of the study is to research and produce solution-process OLED to achieve extended component life. Besides, its light...

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Bibliographic Details
Main Authors: Lin Kuo, 郭霖
Other Authors: 莊賦祥
Format: Others
Language:zh-TW
Published: 2017
Online Access:http://ndltd.ncl.edu.tw/handle/6g6774
Description
Summary:碩士 === 國立虎尾科技大學 === 光電工程系光電與材料科技碩士班 === 105 === This paper has made use of solution process to produce organic light-emitting diodes and measure life-span of its components. The focus of the study is to research and produce solution-process OLED to achieve extended component life. Besides, its light-emitting size measures 1.5 cm X 1.5 cm. First of all, the luminous layer solution is formulated, and the layer is mainly of fluorescent-based material UBH-215, mixed with fluorescent materials in blue and red as UBD-07 and DBP in order to produce double-band light-emitting component. When red fluorescent (DBP) is mixed intensity as 0.25% and under current density as 15mA/cm2, its luminance can reach 230 cd/m2. Then, hole transport layer is added with P-typed mixed materials of (F4-TCNQ) by 4 %, and its ratio and thickness are rendered with optimization so as to enhance its component luminance and efficiency. Afterwards, Adding HBL and ETL materials to optimize their thickness. At the end, the component life and characteristics are tested. The coordinates of such component are (0.38,0.31 ). As indicated from the experiment results, light-emitting diodes and the component structure successfully produced with every layer under optimization conditions given with following materials mixture ratio of optimized layers and thickness of each layer being adjusted are:ITO/ spin-PEDOT:PSS (55nm)/ spin-NPB: F4-TCNQ (35nm)/spin-UBH-215: UBD-07: DBP (40nm)/ evap.-TPBi(10nm)/ evap.-Alq3(30nm)/ LiF (0.8nm)/ Al (150nm)