| Summary: | 碩士 === 國立臺北科技大學 === 光電工程系研究所 === 105 === In this study, spray pyrolysis was employed to fabricate yttrium-doped ZnO thin films on glass substrates to investigate the effect of different doping concentrations on the crystal structure, electrical conductivity, and optical properties of the films.
Zinc acetate (〖Zn(C_2 H_3 O_2)〗_2‧2H_2 O) and yttrium nitrate (Y〖(NO_3)〗_3) were used as sources for zinc and yttrium, respectively, with the yttrium doping ranging from 0 to 2at.%. The XRD results showed that the films had good (002) preferred orientation, and the diffraction angle of the peaks (002) shifted down gradually with the increase of yttrium doping concentration. The result indicated that the yttrium was successfully doped into ZnO films. By the Hall-effect measurement, the best electrical property was obtained at 0.3 at.% doping concentration. Compared to zinc oxide film, the resistivity of the film decreased from 0.103 Ω-cm to 0.086 Ω-cm, the carrier concentration increased from 2.0×〖10〗^18 〖cm〗^(-3) to 3.2×〖10〗^18 〖cm〗^(-3), while the carrier mobility decreased from 30.76 〖cm〗^2/Vs to 22.94 〖cm〗^2/Vs. The spectral analysis revealed that the 1at.% yttrium-doped zinc oxide film reached its maximum transmittance of 72.72 % at 550 nm.
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