| Summary: | 碩士 === 國立雲林科技大學 === 化學工程與材料工程系 === 105 === aluminum oxide and titanium dioxide thin film is formed as dielectric layer of simple capacitors by chemical liquid phase deposition(LPD) between the electrodes. In order to increase the capacitance of the solid capacitors can be achieved by increasing the relative permittivity of the dielectric layer ε, and/or increasing the specific surface area. In this experiment, a copper foil substrate using liquid-phase deposition way to copper catalyst attached to copper foil,and using chemical vapor deposition method, C2H2 , H2, Ar and NH3 as process gas synthesis of CNTs/ graphene composite material. To explore the effect on growth of carbon nanotubes / graphene composites by change the Ammonia flow and growth time. Better preparation of CNTs / graphene composite material conditions for Ammonia flow rate 60 sccm, growth time 10 minute. and then aluminum oxide thin film is formed by chemical liquid phase deposition,coated solid electrolyte PEDOT,.finally, assembling a capacitor CR2032. As a result of CNTs/graphene composite electrode material, the capacitance is 2398.6μF/cm2 and the rate of decline is 18.13%；Better preparation of the Al2O3 / CNTs / graphene composites were by chemical liquid deposition (LPD) to grow the TiO2 thin film. Better preparation of the titanium dioxide film were 4 hours, the heat treatment temperature was 500℃, Coated with solid electrolyte PEDOT, and then assembled into a capacitor CR2032. As a result of the TiO2 / Al2O3 / CNTs / graphene c composite electrode material, the capacitance is 9390.7μF/cm2 and the rate of decline is15.34 %.
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