Scalable patterning of graphene

• Main Authors: Ding-Rui Chen, 陳定睿
• Other Authors: Ya-Ping Hsieh
• Format: Others
• Language: en_US
• Published: 2018
• Online Access: http://ndltd.ncl.edu.tw/handle/4jb2dn

碩士 === 國立中正大學 === 光機電整合工程研究所 === 106 === Patterning of 2D material is necessary for further application to flexible electronics. To increase the commercial impact of graphene in those applications, a scalable and economical method for producing graphene patterns is required. In this work, two different solutions for selective growth for CVD graphene are carried out successfully. AlCl3 solution as the printable ink were applied by ink-jet printing to pattern the graphene and PMMA solution were applied to produce high performance and complex graphene-nano-heterojunction photosensors. However, large-area graphene films produced by means of CVD are polycrystalline and thus contain grain boundaries that can potentially weaken the material. Previous reports selectively deposited metal particles on the grain boundaries using atomic layer deposition schemes. We here present a novel, cost-effective and time-efficient approach to self-decorate graphene defects. The results have demonstrated that the nanowires formed on graphene are composed of highly crystalline nanoparticles and they grew only on defect sites. This thesis contains two type of ink preparation methods to pattern graphene and using the natural pattern of graphene to form new nanowires. These methods are all simple, scalable and efficient which can be directly implemented in future electronics.