| Summary: | 碩士 === 國立中正大學 === 光機電整合工程研究所 === 106 === Graphene has a relatively high carrier mobility and a broad absorption wavelength, and is suitable for use as a photodetector. However, due to the high transmittance of graphene and the fast recombination speed of the carrier, the light response is weak. Therefore, in this study, the formulated TiO2 was dropped on a glass substrate, and it was uniformly and sintered by a spin coater, and then transferred to graphene grown by chemical vapor deposition, and enhance the response of graphene to ultraviolet light through TiO2, but due to the energy gap, the response of TiO2 in the visible light section is weak, so the final deposition of Sb2S3 on graphene by chemical bath deposition method, thereby enhancing the response of TiO2 to visible light, And to explore the optimization parameters of different materials, and finally measured under the atmosphere and vacuum, compare the difference between the two.
Finally, we used a xenon lamp to optimize the parameters of the Sb2S3 / graphene / TiO2 composite component. The experimental results show that the composite has a response value in the 275 nm to 550 nm band, it has been proved that the growth of TiO2 on graphene has indeed improved the defects of graphene, and the deposition of Sb2S3 also improved the problem of the photo-response of TiO2 after 425 nm.
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