| Summary: | 碩士 === 逢甲大學 === 電子工程學系 === 106 === In this research, we designed a new structure of UV Photodetector, we use a non-vacuum environment, low cost and fast production of Ultrasonic spray pyrolysis deposition (USPD) technology to deposit MgZnO thin films, and use this technology to fabricate Semiconductor-Metal-Semiconductor Dual Band Ultraviolet Photodetector, then use of three different electrode Metal, Al ,Au and Ni/Au to observe the characteristics of devices.
First of all, for the material characteristics analysis of MgZnO film, the analysis content is as follows : (1) X-ray photoelectron spectrometer (XPS) analysis of chemical qualitative and quantitative characteristics; (2) X-ray diffraction (XRD) analyzer analysis of crystal structure; (3) Photoluminescence spectrometer (PL) analysis of film defect trap energy level depth; (4) Ellipsometer analyzes the refractive index and the extinction coefficient. (5) UV/Visible/NIR spectrophotometer analysis of optical absorption. (6) Atomic force microscopy (AFM) analysis of surface morphology. (7) Transmission electron microscope (TEM) observation of the depth distribution. Secondly, developed a MgZnO Ultraviolet Photodetector with dual-band sensing capabilities, and analyzed its photo/dark current, photo/dark current rejection ratio, switching time analysis, spectral responsivity analysis, and specific detectivity analysis.
In the study, it was found that the use of USPD technology to deposit MgZnO thin films, and the production of a Dual Band Ultraviolet Photodetector, regardless of whether the metal it plated is Al or Au, its dark current will decrease according to the increase of magnesium content, and two bands can be clearly found in the spectral responsivity schematic and the specific detectivity schematic of all structures. USPD of MgZnO Dual Band Ultraviolet Photodetector has great potential for future industrial applications.
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