| Summary: | 碩士 === 輔仁大學 === 物理學系碩士班 === 106 === Aluminum-doped zinc ( AZO ) thin films were deposited at room temperature with various aluminum concentrations and oxygen partial pressures on the glass substrates and silicon wafers by ion beam co-sputtering process. The optical properties and electrical properties were investigated by the ellipsometer, UV-VIS-IR spectrometer, and Hall measurements. The highest carrier concentrations 5.45×1020/cm3 were observed and the lowest resistivity of 9.67×10-4 Ω·cm was measured on the surface of AZO film deposited with the aluminum concentration of 2.5 at.% under the oxygen partial pressure of 1.6×10-4 Torr during the process. The average visible transmittance of all AZO films in this study was above 80 %. According to the O1s and Zn2p3/2 XPS analyses spectra, the proportion of the different chemical Zn compositions were evaluated. Finally, there were similar variation trends by comparing the fitting results of double Lorentz oscillator model and the results of Hall measurements.
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