A Highly Sensitive CMOS-MEMS Thermal Resistive Altimeter with Dual Sensors

• Main Authors: HUANG, WEI CHUN, 黃暐鈞
• Other Authors: CHEN, CHUNG NAN
• Format: Others
• Language: zh-TW
• Published: 2018
• Online Access: http://ndltd.ncl.edu.tw/handle/ch78q6

碩士 === 國立高雄應用科技大學 === 光電與通訊工程研究所 === 106 === In this study, a highly sensitive thermal resistive altimeter based on CIC TSMC 0.35 μm 2P4M CMOS-MEMS process was designed and fabricated by adopting dual sensing resistive elements. The thermal resistive altimeter with a nano-gap was completed by using surface micromachining process. The altitude sensitivity of the thermal resistive altimeter was converted and calculated by altitude response measurement results. The highly sensitive CMOS-MEMS thermal resistive altimeter formed on a suspension structure with a gap of 525 nm was manufactured successfully by using CMOS-MEMS standard process and surface micromachining process in this work. The metal1 layer was served as a sacrificial layer for the surface machining process and metal 2 and 3 layer was used to form two sensing resistors in the same suspension membrane. The equivalent temperature coefficients of resistance for the two aluminum sensing resistors was measured and estimated as 0.258 %/℃ and 0.242 %/℃,respectively. The altitude response measurement was carried out between 6F and 10F inside a building. The measurement data was recorded by a laptop through a LabVIEW program. According to the measurement data, the altitude sensitivity of the dual-sensor altimeter was calculated as 203.16 μV/m and the operating temperature of the sensor was 150 ℃ under a bias voltage of 5 V. The measurement results show that the altitude sensitivity of the thermal resistive altimeter with dual sensing resistors was 2.1 times greater than the sensitivity of the sensor with single sensing resistor and the same sensing area under the same operating condition.