Study of Low Frequency Properties of Mg2SnO4 Dielectric Ceramics
碩士 === 龍華科技大學 === 電子工程系碩士班 === 106 === This paper discusses microwave dielectric properties of Mg2SnO4, by using traditional solid-state reaction method, The samples were sintered at four different temperatures of 1450°C, 1500°C, 1550°C, and 1600°C. The results show that the sintering temperature of...
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Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2018
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Online Access: | http://ndltd.ncl.edu.tw/handle/m2q2xt |
Summary: | 碩士 === 龍華科技大學 === 電子工程系碩士班 === 106 === This paper discusses microwave dielectric properties of Mg2SnO4, by using traditional solid-state reaction method, The samples were sintered at four different temperatures of 1450°C, 1500°C, 1550°C, and 1600°C. The results show that the sintering temperature of Mg2SnO4 is optimized at 1500°C for four hours, with a density of 4.638g/cm3, dielectric constant of 8.741, microwave dielectric properties Q×f of 570.45 MHz.
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